HS2M-F1-0000HF

Mfr.Part #
HS2M-F1-0000HF
Manufacturer
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package/Case
-
Datasheet
Download
Description
DIODE GEN PURP 1000V 2A DO214AA
Stock
3000

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
2A
Current - Reverse Leakage @ Vr :
5 µA @ 1000 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-214AA, SMB
Product Status :
Active
Reverse Recovery Time (trr) :
75 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
DO-214AA (SMB)
Voltage - DC Reverse (Vr) (Max) :
1000 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 2 A
Datasheets
HS2M-F1-0000HF

Manufacturer related products

Catalog related products

  • Toshiba Semiconductor and Storage
    DIODE SCHOTTKY 30V 1A SFLAT
  • Diodes Incorporated
    DIODE SBR 60V 900MA SOT23-3
  • Micro Commercial Co
    DIODE SCHOTTKY 40V 3A DO214AC
  • Micro Commercial Co
    DIODE SCHOTTKY 100V 3A DO214AC
  • onsemi
    DIODE SCHOTTKY 40V 1A SOD323HE

Related products

Part Manufacturer Stock Description
HS2M SURGE 250 1.5A -1000V - SMB (DO-214AA) - R
HS2M Taiwan Semiconductor Corporation 3,000 DIODE GEN PURP 2A DO214AA
HS2M R5G Taiwan Semiconductor Corporation 3,000 DIODE GEN PURP 1KV 2A DO214AA
HS2MA SURGE 220 2A -1000V - DO-214AC(SMA) - RECT
HS2MA Taiwan Semiconductor Corporation 3,000 DIODE GEN PURP 1.5A DO214AC
HS2MA R3G Taiwan Semiconductor Corporation 3,604 DIODE GEN PURP 1KV 1.5A DO214AC
HS2MA-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd 3,000 DIODE GEN PURP 1000V 2A DO214AC
HS2MFS Taiwan Semiconductor Corporation 8,166 75NS, 2A, 1000V, HIGH EFFICIENT