| 1N821 |
Microchip Technology |
3,000 |
DIODE ZENER DO35 |
| 1N821-1/TR |
Microchip Technology |
3,000 |
DIODE ZENER TEMP COMPENSATED |
| 1N821-1E3 |
Microchip Technology |
3,000 |
DIODE ZENER TEMP COMPENSATED |
| 1N821-1E3/TR |
Microchip Technology |
3,000 |
DIODE ZENER TEMP COMPENSATED |
| 1N821/TR |
Microchip Technology |
3,000 |
DIODE ZENER TEMP COMPENSATED |
| 1N821A |
Microchip Technology |
518 |
DIODE ZENER 6.2V 500MW DO35 |
| 1N821A |
Solid State Inc. |
4,900 |
DIODE ZENER 6.2V 400MW DO35 |
| 1N821A |
NTE Electronics, Inc |
465 |
DIODE ZENER 6.2V 400MW DO35 |
| 1N821A (DO35) |
Microchip Technology |
3,000 |
DIODE ZENER 6.2V 500MW DO35 |
| 1N821A BK |
Central Semiconductor Corp |
3,000 |
TRANSISTOR |
| 1N821A TR |
Central Semiconductor Corp |
3,000 |
TRANSISTOR |
| 1N821A, SEL. 1% VBR |
Microchip Technology |
3,000 |
DIODE ZENER 6.2V 500MW DO35 |
| 1N821A-1 |
Microchip Technology |
3,000 |
ZENER DIODE |
| 1N821A-1/TR |
Microchip Technology |
3,000 |
DIODE ZENER TEMP COMPENSATED |
| 1N821A-1E3 |
Microchip Technology |
3,000 |
DIODE ZENER TEMP COMPENSATED |