RN1606(TE85L,F)
- Mfr.Part #
- RN1606(TE85L,F)
- Manufacturer
- Toshiba Semiconductor and Storage
- Package/Case
- -
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.3W SM6
- Stock
- 390
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- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74, SOT-457
- Power - Max :
- 300mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 4.7kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- SM6
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- RN1606(TE85L,F)
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|---|---|---|---|
| RN1601(TE85L,F) | Toshiba Semiconductor and Storage | 502 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1602(TE85L,F) | Toshiba Semiconductor and Storage | 3,000 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1604(TE85L,F) | Toshiba Semiconductor and Storage | 1,668 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1605TE85LF | Toshiba Semiconductor and Storage | 112 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1607(TE85L,F) | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1608(TE85L,F) | Toshiba Semiconductor and Storage | 2,891 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1609(TE85L,F) | Toshiba Semiconductor and Storage | 2,965 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1610(TE85L,F) | Toshiba Semiconductor and Storage | 1,310 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1611(TE85L,F) | Toshiba Semiconductor and Storage | 2,384 | TRANS 2NPN PREBIAS 0.3W SM6 |
| RN1673(TE85L,F) | Toshiba Semiconductor and Storage | 3,000 | TRANS 2NPN PREBIAS 0.3W SM6 |
