RN2601(TE85L,F)
- Mfr.Part #
- RN2601(TE85L,F)
- Manufacturer
- Toshiba Semiconductor and Storage
- Package/Case
- -
- Datasheet
- Download
- Description
- TRANS 2PNP PREBIAS 0.3W SM6
- Stock
- 253
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- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA, 5V
- Frequency - Transition :
- 200MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74, SOT-457
- Power - Max :
- 300mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 4.7kOhms
- Resistor - Emitter Base (R2) :
- 4.7kOhms
- Supplier Device Package :
- SM6
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- RN2601(TE85L,F)
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RN2602(TE85L,F) | Toshiba Semiconductor and Storage | 2,630 | TRANS 2PNP PREBIAS 0.3W SM6 |
| RN2603(TE85L,F) | Toshiba Semiconductor and Storage | 11,990 | TRANS 2PNP PREBIAS 0.3W SM6 |
| RN2604(TE85L,F) | Toshiba Semiconductor and Storage | 3,000 | TRANS 2PNP PREBIAS 0.3W SM6 |
| RN2605(TE85L,F) | Toshiba Semiconductor and Storage | 15,061 | TRANS 2PNP PREBIAS 0.3W SM6 |
| RN2606(TE85L,F) | Toshiba Semiconductor and Storage | 1,030 | TRANS 2PNP PREBIAS 0.3W SM6 |
| RN2607(TE85L,F) | Toshiba Semiconductor and Storage | 694 | TRANS 2PNP PREBIAS 0.3W SM6 |
| RN2608(TE85L,F) | Toshiba Semiconductor and Storage | 3,000 | TRANS 2PNP PREBIAS 0.3W SM6 |
| RN2610(TE85L,F) | Toshiba Semiconductor and Storage | 2,945 | TRANS 2PNP PREBIAS 0.3W SM6 |
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