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  5. RN2901FE(TE85L,F)
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    RN2901FE(TE85L,F)

    Mfr.Part #
    RN2901FE(TE85L,F)
    Manufacturer
    Toshiba Semiconductor and Storage
    Package/Case
    -
    Datasheet
    Download
    Description
    TRANS 2PNP PREBIAS 0.1W ES6
    Stock
    1900

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    Manufacturer :
    Toshiba Semiconductor and Storage
    Product Category :
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
    Current - Collector (Ic) (Max) :
    100mA
    Current - Collector Cutoff (Max) :
    100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce :
    30 @ 10mA, 5V
    Frequency - Transition :
    200MHz
    Mounting Type :
    Surface Mount
    Package / Case :
    SOT-563, SOT-666
    Power - Max :
    100mW
    Product Status :
    Active
    Resistor - Base (R1) :
    4.7kOhms
    Resistor - Emitter Base (R2) :
    4.7kOhms
    Supplier Device Package :
    ES6
    Transistor Type :
    2 PNP - Pre-Biased (Dual)
    Vce Saturation (Max) @ Ib, Ic :
    300mV @ 250µA, 5mA
    Voltage - Collector Emitter Breakdown (Max) :
    50V
    Datasheets
    RN2901FE(TE85L,F)

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