NHDTA114ETR

Manufacturer :

Nexperia USA Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Frequency - Transition :

150 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Active

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

TO-236AB

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

80 V