N0600N-S17-AY

Manufacturer :

Rochester Electronics, LLC

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

30A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

29.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1380 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Isolated Tab

Power Dissipation (Max) :

2W (Ta), 20W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

36mOhm @ 15A, 4.5V

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-