FDS6162N7

Manufacturer :

Rochester Electronics, LLC

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

23A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

73 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

5521 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power Dissipation (Max) :

3W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

3.5mOhm @ 23A, 4.5V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA