SIS126DN-T1-GE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12A (Ta), 45.1A (Tc)

Drain to Source Voltage (Vdss) :

80 V

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1402 pF @ 40 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Power Dissipation (Max) :

3.7W (Ta), 52W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

10.2mOhm @ 10A, 10V

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA