NVD5863NLT4G-VF01

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

14.9A (Ta), 82A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3850 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

3.1W (Ta), 96W (Tc)

Product Status :

Last Time Buy

Rds On (Max) @ Id, Vgs :

7.1mOhm @ 41A, 10V

Supplier Device Package :

DPAK-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA