2SK1058-E

Manufacturer :

Renesas Electronics America Inc

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Drain to Source Voltage (Vdss) :

160 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Power Dissipation (Max) :

100W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

TO-3P

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

-