SI3475DV-T1-GE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

950mA (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

18 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

500 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

1.61Ohm @ 900mA, 10V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4V @ 250µA