| BA891,115 |
NXP USA Inc. |
3,000 |
DIODE STANDARD 35V 715MW SOD523 |
| BA892-02V |
Rochester Electronics, LLC |
36,000 |
SILICON RF SWITCHING DIODE |
| BA892-02V-E6327 |
Rochester Electronics, LLC |
12,000 |
RECTIFIER DIODE, 35V |
| BA892-02VE6327 |
Rochester Electronics, LLC |
15,000 |
RECTIFIER DIODE, 35V |
| BA89202LE6327 |
Rochester Electronics, LLC |
38,046 |
RECTIFIER DIODE, 35V |
| BA89202VH6127XTSA1 |
Infineon Technologies |
28,268 |
RF DIODE STANDARD 35V SC79-2 |
| BA89202VH6327XTSA1 |
Rochester Electronics, LLC |
3,000 |
SILICON RF SWITCHING DIODE |
| BA89202VH6327XTSA1 |
Infineon Technologies |
31,170 |
RF DIODE STANDARD 35V SC79-2 |
| BA89202VH6433XTMA1 |
Infineon Technologies |
3,000 |
RF DIODE STANDARD 35V SC79-2 |
| BA892E6770 |
Rochester Electronics, LLC |
3,000 |
MIXER DIODE, VERY HIGH FREQUENCY |
| BA892H6127XTSA1 |
Infineon Technologies |
3,000 |
RF DIODE STANDARD 35V SCD80 |
| BA892H6327XTSA1 |
Infineon Technologies |
3,000 |
RF DIODE STANDARD 35V SCD80 |
| BA892H6433XTMA1 |
Infineon Technologies |
3,000 |
RF DIODE STANDARD 35V SCD80 |
| BA892H6770XTSA1 |
Infineon Technologies |
3,000 |
RF DIODE STANDARD 35V SCD80 |
| BA895-E6327 |
Rochester Electronics, LLC |
3,000 |
PIN DIODE |
