| MHT1000HR5178 |
Rochester Electronics, LLC |
49 |
N CHANNEL ENHANCEMENT-MODE RF PO |
| MHT1001HR5 |
NXP USA Inc. |
3,000 |
IC TRANS RF LDMOS 2450MHZ |
| MHT1002GNR3 |
NXP USA Inc. |
3,000 |
IC RF AMP 915MHZ OM-780G-4L |
| MHT1002NR3 |
NXP USA Inc. |
3,000 |
IC RF AMP 915MHZ OM780-4 |
| MHT1003NR3 |
NXP USA Inc. |
3,000 |
IC TRANS RF LDMOS 2450MHZ |
| MHT1004GNR3 |
Rochester Electronics, LLC |
46 |
RF POWER FIELD-EFFECT TRANSISTOR |
| MHT1004GNR3 |
NXP USA Inc. |
3,000 |
RF MOSFET LDMOS 32V OM780-2 GULL |
| MHT1004NR3 |
NXP USA Inc. |
3,000 |
RF POWER LDMOS TRANSISTOR 2450 |
| MHT1005HSR3 |
NXP USA Inc. |
1,750 |
IC LDMOS TRANS 120V NI-780S |
| MHT1006NT1 |
NXP USA Inc. |
3,000 |
FET RF 65V 2.17GHZ PLD1.5W |
| MHT1008NT1 |
NXP USA Inc. |
1,507 |
RF MOSFET LDMOS PLD1.5W |
| MHT1008NT1 |
Rochester Electronics, LLC |
850 |
RF POWER FIELD-EFFECT TRANSISTOR |
| MHT1008NT1515 |
Rochester Electronics, LLC |
3,000 |
RF POWER LDMOS TRANSISTOR FOR CO |
| MHT1108NT1 |
NXP USA Inc. |
3,000 |
RF POWER LDMOS TRANSISTOR FOR CO |
| MHT1801A |
Flip Electronics |
9,000 |
NO DESCRIPTION |
