1N829A

Mfr.Part #
1N829A
Manufacturer
NTE Electronics, Inc
Package/Case
-
Datasheet
Download
Description
DIODE ZENER 6.2V 500MW DO35
Stock
516

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
NTE Electronics, Inc
Product Category :
Diodes - Zener - Single
Current - Reverse Leakage @ Vr :
2 µA @ 3 V
Impedance (Max) (Zzt) :
10 Ohms
Mounting Type :
Through Hole
Operating Temperature :
-65°C ~ 175°C
Package / Case :
DO-204AH, DO-35, Axial
Power - Max :
500 mW
Product Status :
Active
Supplier Device Package :
DO-35 (DO-204AH)
Tolerance :
±5%
Voltage - Forward (Vf) (Max) @ If :
-
Voltage - Zener (Nom) (Vz) :
6.2 V
Datasheets
1N829A

Manufacturer related products

  • NTE Electronics, Inc
    BUZZER 24V 32.51X26.92MM PNL MNT
  • NTE Electronics, Inc
    BUZZER 240V 32.51X26.92 PNL MNT
  • NTE Electronics, Inc
    BUZZER 120V 32.51X26.92 PNL MNT
  • NTE Electronics, Inc
    BUZZER 12V 32.51X26.92MM PNL MNT
  • NTE Electronics, Inc
    BATT CHG USB PWR PK 4.8-5.25V 1A

Catalog related products

Related products

Part Manufacturer Stock Description
1N821 Microchip Technology 3,000 DIODE ZENER DO35
1N821-1 Microchip Technology 389 DIODE ZENER 6.2V 500MW DO35
1N821-1/TR Microchip Technology 3,000 DIODE ZENER TEMP COMPENSATED
1N821-1E3 Microchip Technology 3,000 DIODE ZENER TEMP COMPENSATED
1N821-1E3/TR Microchip Technology 3,000 DIODE ZENER TEMP COMPENSATED
1N821/TR Microchip Technology 3,000 DIODE ZENER TEMP COMPENSATED
1N821A Microchip Technology 518 DIODE ZENER 6.2V 500MW DO35
1N821A Solid State Inc. 4,900 DIODE ZENER 6.2V 400MW DO35
1N821A NTE Electronics, Inc 465 DIODE ZENER 6.2V 400MW DO35
1N821A (DO35) Microchip Technology 3,000 DIODE ZENER 6.2V 500MW DO35
1N821A BK Central Semiconductor Corp 3,000 TRANSISTOR
1N821A TR Central Semiconductor Corp 3,000 TRANSISTOR
1N821A, SEL. 1% VBR Microchip Technology 3,000 DIODE ZENER 6.2V 500MW DO35
1N821A-1 Microchip Technology 3,000 ZENER DIODE
1N821A-1/TR Microchip Technology 3,000 DIODE ZENER TEMP COMPENSATED